High temperature study of flexible silicon-on-insulator fin field-effect transistors

作者：Diab Amer; Sevilla Galo A Torres; Ghoneim Mohamed T; Hussain Muhammad M^*

来源：Applied Physics Letters, 2014, 105(13): 133509.

DOI：10.1063/1.4897148

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry%26apos;s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20nm fins and high-kappa/metal gate stacks. Characterization from room to high temperature (150 degrees C) was completed to determine temperature dependence of drain current (I-ds), gate leakage current (I-gs), transconductance (g(m)), and extracted low-field mobility (mu(0)). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

• 出版日期2014-9-29