Activation of boron and recrystallization in Ge preamorphization implant structure of ultra shallow junctions by microwave annealing

作者：Tsai Ming Han^*; Wu Chi Ting; Lee Wen His

来源：Japanese Journal of Applied Physics, 2014, 53(4): 041302.

DOI：10.7567/JJAP.53.041302

In this study, high-current and low-energy (400 eV) ion implantation and low-temperature microwave annealing were employed to achieve ultra shallow junctions. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (2400 W; similar to 500 degrees C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a 600 W (similar to 250 degrees C) microwave was used to achieve low sheet resistance. The device subjected to two-step microwave annealing at 2400 W for 300 s + 600 W for 600 s has the lowest V-th. It also has the lowest subthreshold swing (SS), which means that it has the highest cap ability to control sub threshold current. In these three devices, the largest I-on /I-off ratio is 2.203 x 10(6), and the smallest I-on /I-off ratio is 2.024 x 10(6).

• 出版日期2014-4