A novel SOI MESFET by -shaped gate for improving the driving current

作者：Shahnazarisani Hadi; Orouji Ali A^*; Anvarifard Mohammad K

来源：Journal of Computational Electronics, 2014, 13(2): 562-568.

DOI：10.1007/s10825-014-0569-9

• MESFET
• Maximum available gain
• Maximum oscillation frequency
• Silicon on insulator (SOI)

This paper introduces a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor (MESFET) with -shaped gate with triple work-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the -SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the -SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency and maximum available gain have been evaluated and improved in the proposed structure.

• 出版日期2014-6