科研之友
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摘要
We propose a spin Hall device to induce a large spin Hall effect in a superconductor/normal-metal (SN) junction. The side jump and skew scattering mechanisms are both taken into account to calculate the extrinsic spin Hall conductivity in the normal metal. We find that both contributions are anomalously enhanced when the voltage between the superconductor and the normal metal approaches to the superconducting gap. This enhancement is attributed to the resonant increase of the density of states in the normal metal at the Fermi level. Our results demonstrate a way to control and amplify the spin Hall conductivity by applying an external dc electric field, suggesting that SN junctions have potential applications for spintronic devices with large spin Hall effects.
- 出版日期2011-7-27
