Process modules for GeSn nanoelectronics with high Sn-contents

作者：Schulte Braucks C; Glass S; Hofmann E; Stange D; von den Driesch N; Hartmann J M; Ikonic Z; Zhao Q T; Buca D; Mantl S

来源：Solid-State Electronics, 2017, 128: 54-59.

DOI：10.1016/j.sse.2016.10.024

• GeSn
• MOSFET
• High-k/metal gate
• NiGeSn

This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0-14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including temperature dependent I-V characteristics. Finally, as an important step towards implementing GeSn in tunnel-FETs, negative differential resistance in Ge0.87Sn0.13 tunnel-diodes is demonstrated at cryogenic temperatures. The present work provides a base for further optimization of GeSn FETs and novel tunnel FET devices.

• 出版日期2017-2
• 单位中国地震局; Forschungszentrum Juelich