Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

作者：Kanashima Takeshi^*; Katsura Yuu; Okuyama Masanori

来源：Japanese Journal of Applied Physics, 2014, 53(4): 04ED11.

DOI：10.7567/JJAP.53.04ED11

An organic ferroelectric gate field-effect transistor (FET) memory has been fabricated using an organic semiconductor of rubrene thin film with a high mobility and a gate insulating layer of poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] thin film. A rubrene thin-film sheet was grown by physical vapor transport (PVT), and placed onto a spin-coated P(VDF-TeFE) thin-film layer, and Au source and drain electrodes were formed on this rubrene thin film. A hysteresis loop of the drain current-gate voltage (I-D-V-G) characteristic has been clearly observed in the ferroelectric gate FET, and is caused by the ferroelectricity. The maximum drain current is 1.5 x 10(-6) A, which is about two orders of magnitude larger than that of the P(VDF-TeFE) gate FET using a pentacene thin film. Moreover, the mobility of this organic ferroelectric gate FET using rubrene thin film is 0.71cm(2)V(-1)s(-1), which is 35 times larger than that of the FET with pentacene thin film.

• 出版日期2014-4