Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering

作者：Jo Young Dae; Hui K N; Hui K S^*; Cho Y R; Kim Kwang Ho

来源：Materials Research Bulletin, 2014, 51: 345-350.

DOI：10.1016/j.materresbull.2013.12.026

• Composites
• Thin films
• Sputtering
• X-ray diffraction
• Optical properties

Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni2O3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 x 10(-3) Omega cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 x 10(-3) Omega, cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.

• 出版日期2014-3