A mechanical memory with a dc modulation of nonlinear resonance

作者：Noh Hyunho; Shim Seung Bo; Jung Minkyung; Khim Zheong G; Kim Jinhee^*

来源：Applied Physics Letters, 2010, 97(3): 033116.

DOI：10.1063/1.3454773

• bifurcation
• nanoelectromechanical devices
• resonance
• resonators

We present a mechanical memory device based on dynamic motion of a nanoelectromechanical (NEM) resonator. The NEM resonator exhibits clear nonlinear resonance characteristics which can be controlled by the dc bias voltage. For memory operations, the NEM resonator is driven to the nonlinear resonance region, and binary values are assigned to the two allowed states on the bifurcation branch. The transition between memory states is achieved by modulating the nonlinear resonance characteristics with dc bias voltage. Our device works at room temperature and modest vacuum conditions with a maximum operation frequency of about 5 kHz.

• 出版日期2010-7-19