Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal-Oxide-Semiconductor Field-Effect Transistor

作者：Eriguchi Koji^*; Kamei Masayuki; Takao Yoshinori; Ono Kouichi

来源：Japanese Journal of Applied Physics, 2011, 50(10): 10PG02.

DOI：10.1143/JJAP.50.10PG02

We discuss plasma charging damage (PCD) to high-k gate dielectrics and the resultant threshold voltage shift (Delta V-th) in n-channel metal-oxide-semiconductor field-effect transistors (n-ch MOSFETs). The PCD induced by the antenna effect is focused on, and Delta V-th and its variation are estimated for MOSFETs treated by various plasma processes. We propose a Delta V-th variation model based on both the power-law dependence of Delta V-th on the antenna ratio r (= exposed metal interconnect area/gate area) and the r distribution deduced from an interconnect-length distribution ILDF) in a large-scale integrated (LSI) circuit. Then, we simulate the variations in Delta V-th [sigma(Delta V-th)] and the subthreshold leakage current I-off [sigma(I-off)], in accordance with the employed r distribution. The model prediction quantitatively shows the effects of PCD on sigma(Delta V-th) and sigma (I-off): The antenna effect is found to increase sigma(Delta V-th) and sigma(I-off).

• 出版日期2011-10