科研之友
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摘要
A setup for measuring the temperature dependences of refractive indices n(T) of semiconductors and dielectrics in the temperature range 300-700 K at the wavelengths of a He-Ne laser lambda=0.63, 1.15, and 3.39 mu m is described. Samples in the form of plane-parallel plates serve as Fabry-Perot etalons the optical thickness of which depends on the temperature. Upon heating and subsequent cooling of a sample, interference oscillations of the refiected-light intensity are recorded and used to determine the dependence n(T). The values of the refractive index at room temperature and the thermal expansion coefficient used in calculations are taken from the literature. Comparing the interferograms obtained for a heated and cooled sample allows evaluation of the temperature difference between the sample's probed area and a measuring thermocouple. The relative error in determining thermooptical coefficient dn/dT in the range 300-700 K is within 1%.
- 出版日期2010-1
