A step toward next-generation nanoimprint lithography: extending productivity and applicability

作者:Ok Jong G*; Shin Young Jae; Park Hui Joon; Guo L Jay
来源:Applied Physics A, 2015, 121(2): 343-356.
DOI:10.1007/s00339-015-9229-6

摘要

Because of its unique principle based on mechanical deformation, nanoimprint lithography (NIL) has been playing an important role for nanopatterning and nanofabrication beyond the limit of conventional optical lithography. Many diverse fields involving electronics, photonics, and energy engineering have all shown significant increase in utilization of nanopattern structures, particularly in large areas and at submicron scales. To meet this demand, expanding the realm of NIL toward more scalable and versatile patterning technology is in high demand. In this feature article, we give an overview of how NIL can extend productivity and applicability by addressing three key issues: continuous NIL for more scalable nanopatterning, large-area mold fabrications, and novel resist engineering.

  • 出版日期2015-11