Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

作者:Munira Kamaram*; Romero Jonathon; Butler William H
来源:Journal of Applied Physics, 2014, 115(17): 17B731.
DOI:10.1063/1.4866703

摘要

Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn-2 interface layers.

  • 出版日期2014-5-7