Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

作者：Chan C W^*; Li F; Sanchez A; Mawby P A; Gammon P M

来源：IEEE Transactions on Electron Devices, 2017, 64(9): 3713-3718.

DOI：10.1109/TED.2017.2719898

• High-temperature operation
• Power LDMOSFETs
• reduced surface electric field (RESURF)
• semiconductor device modeling
• silicon carbide
• silicon-on-insulator technology
• silicon-on-silicon carbide

This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300 degrees C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an off-state leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller in value and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to -200 V, which behaves similar to the bulk-Si LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in Technology Computer-Aided Design simulations.

• 出版日期2017-9