A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors

作者：Sahoo Avinash^*; Thakur Pankaj Kumar; Mahapatra Santanu

来源：IEEE Transactions on Electron Devices, 2010, 57(3): 632-636.

DOI：10.1109/TED.2009.2039098

• Compact modeling
• double-gate (DG) MOSFET

Previous techniques used for solving the 1-D Poisson equation ( PE) rigorously for long-channel asymmetric and independent double-gate (IDG) transistors result in potential models that involve multiple intercoupled implicit equations. As these equations need to be solved self-consistently, such potential models are clearly inefficient for compact modeling. This paper reports a different rigorous technique for solving the same PE by which one can obtain the potential profile of a generalized IDG transistor that involves a single implicit equation. The proposed Poisson solution is shown to be computationally more efficient for circuit simulation than the previous solutions.

• 出版日期2010-3