摘要

An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed Different spin-valve based full Wheatstone bridge sensors with the current straps integrated in the chip have been considered These devices have been experimentally characterized in order to extract the model parameters In this respect we have focused on the sensors linear operation regime The model which allows the individual description of the magnetoresistive elements has been implemented in a circuit simulator by means of a behavioral description language Verilog-A We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC) level by taking advantage of their multip

  • 出版日期2010-12