A 2 76-mW, 3- TO 10-GHz ULTRAWIDEBAND LNA USING 0 18-mu m CMOS TECHNOLOGY

作者：Chang Jin Fa; Lin Yo Sheng^*

来源：Microwave and Optical Technology Letters, 2011, 53(1): 94-97.

DOI：10.1002/mop.25667

• CMOS wideband
• low power
• common gate
• loss noise amplifier

A low posse, (2 76 mW) common gate (CG) loss noise amplifier (LNA) for ultrawideband (UWB) systems using standard 018 mu m CMOS technology is demonstrated Instead of the traditional single parallel induct, (L(S1) only) we propose a nest matching network consisting of a series L(S1)-R(S1) in series with a parallel L(S2)-R(S2) to enhance the input matching bandwidth Flat and high S(21) was achieved by using the connecting induct, L(C) and the peaking induct, L(D2) to compensate the gain loss at medium frequency and high frequency respectively In addition for suitable values of L(C) and L(D2) flat and low noise figure (NF i e a nearly critically damped Q factor for the second order NF frequency;espouse) can also be achieved Over the 3 10 GHz band of interest the LNA achieved S21 of 101 +/- 1 7 dB minimum NF of 39 dB (at 4 GHz) and an average NF of 46 dB The power dissipation was 2 76 mW and the col responding figure of met it Is as 4 3 Both a

• 出版日期2011-1