A hybrid ferroelectric-flash memory cells

作者：Park Jae Hyo; Byun Chang Woo; Seok Ki Hwan; Kim Hyung Yoon; Chae Hee Jae; Lee Sol Kyu; Son Se Wan; Ahn Donghwan^*; Joo Seung Ki

来源：Journal of Applied Physics, 2014, 116(12): 124512.

DOI：10.1063/1.4896737

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O-3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm(2) V-1 s(-1) of field-effect mobility, 190 mV dec(-1) of substhreshold slope, and 8 x 10(5) on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5V), faster P/E switching speed (50/500 mu s), long retention time (>10 years), and excellent fatigue P/E cycle (>10(5)) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

• 出版日期2014-9-28