Micromagnetic Study of Electrical-Field-Assisted Magnetization Switching in MTJ Devices

作者：Carpentieri Mario^*; Tomasello Riccardo; Ricci Marco; Burrascano Pietro; Finocchio Giovanni

来源：IEEE Transactions on Magnetics, 2014, 50(11): 1401804.

DOI：10.1109/TMAG.2014.2327192

• Interfacial perpendicular anisotropy
• magnetization switching
• voltage controlled magnetocrystalline anisotropy (VCMA)

Perpendicular MgO-based magnetic tunnel junctions are optimal candidates as building blocks of spin-transfer torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below 106 A/cm(2). A recent work has experimentally demonstrated the possibility of performing magnetization switching assisted by an electric-field at ultralow current density. Theoretically, this switching has been studied using a macrospin approach only. Here, we show a full micromagnetic study. We found that the switching occurs via a complex nucleation process including the nucleation of magnetic vortexes.

• 出版日期2014-11