A novel vertical channel self-aligned split-gate flash memory

作者：Wu Dake; Zhou Falong; Huang Ru^*; Li Yan; Cai Yimao; Guo Ao; Zhang Xing; Wang Yangyuan

来源：Solid-State Electronics, 2009, 53(2): 124-126.

DOI：10.1016/j.sse.2008.11.014

• Flash memory
• Vertical channel
• Floating-gate
• Split-gate
• Low-power
• High-density

A novel vertical channel self-aligned split-gate floating-gate flash memory (VSAS_FG) was proposed and experimentally demonstrated for the first time. The floating-gate of VSAS_FG can be self-aligned realized without additional mask. Moreover, the VSAS_FG has higher scalability since the cell area of vertical channel device is independent on gate length. With enhanced electrical fields for programming and erasing, the fabricated VSAS_FG can achieve similar to 10 mu s programming time and similar to 10 ms erasing time. The cycling endurance and the bake retention were also investigated. The experimental results demonstrate the feasibility of the VSAS_FG concept as a promising candidate for low-power, high-density flash memory application.

• 出版日期2009-2
• 单位北京大学