Ag contact on sol-gel processed MgZnO film

作者：Huang Wen Chang^*; Lin Tien Chai; Hsien Tsung Lieh; Tsai Meng Hua; Horng Chia Tsung; Kuo Tsung Lin

来源：Microelectronic Engineering, 2013, 107: 205-209.

DOI：10.1016/j.mee.2012.08.027

• Sol-gel
• MgZnO
• Schottky diode
• Silver

The contact characteristics of Ag on a sol-gel processed MgZnO thin film is presented in the paper. Both of the material properties of the sol-gel ZnO films and the electrical characteristics of the Schottky diode are addressed in the paper. The structure of the MgZnO film is confirmed by X-ray diffraction analysis and the MgZnO film exhibits a hexagonal wurtzite-type polycrystalline. The optical bandgap of the film is determined by using transmittance spectra and is found to be 3.42 eV. The Ag/MgZnO diode shows a barrier height of 0.78 eV with an ideality factor value of 1.21 and a reverse current of 3.39 x 10(-4) A/cm(2) at -3 V. The Cheung's function is also used to determine the parameters of the diode. The series resistance with a value of 1.38 x 10(4) Omega is evaluated.

• 出版日期2013-7