Modeling capacitance-voltage characteristic of TiW/p-InP Schottky barrier diode

作者：Wang, Yi-Dong; Chen, Jun^*

来源：Chinese Physics B, 2018, 27(9): 097203.

DOI：10.1088/1674-1056/27/9/097203

• Schottky barrier diode
• interface state
• series resistance

The capacitance-voltage (C-V) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (N-ss), series resistance (R-s), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients alpha and beta are used to reflect the N-ss and R-s on the C-V characteristics, respectively. The alpha decreases with the increase of frequency, while beta increases with the increase of frequency. The capacitance increases with the increase of alpha and the decrease of beta. From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

• 出版日期2018-9
• 单位苏州大学