摘要

Conductive rough surfaces separated by an insulating ultrathin film comprise the core of various engineering and scientific systems. Electron tunneling through the potential barrier imposed by the insulating film is the main mechanism of charge transport across these interfaces. The strong dependence of the tunnel current on the characteristics of the interface provides an in situ means of studying the electromechanical behavior of hindered interfaces in terms of the current-voltage response. Analytical relationships for the current density versus applied voltage that include the real tunneling area are used to characterize the electrical and mechanical properties of the interfaces of rough conductive surfaces coated by an insulating thin film. It is shown that the contact load, real contact area, surface topography, mechanical properties, and insulating film characteristics, such as thickness, dielectric constant, and potential barrier, can be determined from simple electrical measurements and the use of the present analytical approach.

  • 出版日期2005-4-1