科研之友
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摘要
The physical and electronic properties of Ir-modified Si(111) surface have been investigated with the help of STM (scanning tunneling microscopy) and LEED (low energy electron diffraction). The LEED pattern of the surface exhibits root 7 x root 7-R19.1 degrees reconstruction. STM images show that root 7 x root 7-R19.1 degrees reconstruction originates from the Ir-ring clusters. STS (scanning tunneling spectroscopy) measurements on the ring clusters reveal a state located about 0.3 eV below the Fermi level. A careful analysis shows that this state originates from root 7 x root 7-R19.1 degrees domains of Ir-modified Si(111) surface.
- 出版日期2013-11-6
