Atomic bonding and disorder at Ge:GeO2 interfaces

作者：Li H; Lin L; Xiong K; Robertson J^*

来源：Microelectronic Engineering, 2011, 88(7): 1564-1568.

DOI：10.1016/j.mee.2011.03.136

• Germanium
• Germanium dioxide
• High mobility channel
• Passivation
• Calculation
• Electronic structure
• Defects
• Band offsets

GeO2 has disorder due to oxygen deficiency which occurs as both the O vacancy and a defect pair, the valence alternation pair. This allows the injection of Ge into GeO2 which may cause the Ge:GeO2 interface to be rougher than the Si:SiO2 interface. Their defect energy levels are calculated. The Ge:GeO2 interface also has a relatively low conduction band offset which means that the presence of GeO2 is a potential electron trapping layer in gate stacks desiring low effective oxide thickness.

• 出版日期2011-7