A novel self-aligned process for platinum silicide nanowires

作者：Zhang Zhen^*; Hellstrom Per Erik; Lu Jun; Ostling Mikael; Zhang Shi Li

来源：Microelectronic Engineering, 2006, 83(11-12): 2107-2111.

DOI：10.1016/j.mee.2006.09.032

• sidewall transfer lithography
• self-aligned process
• nanowire
• platinum silicide

Directly accessible, ultralong, uniform platinum silicide nanowires in PtSi and Pt2Si are mass-fabricated by combining a sidewall transfer lithography (STL) technology and a self-aligned silicide process. The STL technology is based on standard Si technology. The self-aligned platinum silicide (PtSix) process consists of two sequential steps in a single run: a silicidation step in N-2 to ensure a controllable silicide formation followed by an oxidation step in O-2 to form a reliable protective SiOx layer on top of the grown PtSix. The achieved nanowires are characterised by a low resistivity: 26 +/- 3 and 34 +/- 2 mu Omega cm for the Pt2Si- and PtSi-dominated nanowires.

• 出版日期2006-12