摘要

Laser induced forward transfer (LIFT) of ZnO and TiO(2) thin films onto Si has been realized with femtosecond double pulses of equal intensity, as a basic form of pulse shaping. In an effort to investigate the possibility to control the spatial distribution of the transfer via pulse separation, we used separation times varying from 0 to 10 ps. We have found that the size of the transferred spots increases by as much as 50% for pulse separation up to 500 fs, while for longer pulse separations the transferred spots acquire a constant area.

  • 出版日期2010-11-1