Promoting inter-diffusion behavior of Co/Si (100) films by high magnetic field annealing

作者：Wang, Kai; Zhao, Yue; Wang, Qiang^*; Li, Guojian; Pang, Hongxuan; He, Jicheng

来源：Vacuum, 2015, 116: 110-114.

DOI：10.1016/j.vacuum.2015.03.013

• Diffusion
• Thin films
• Interfaces
• High magnetic fields
• Annealing
• X-ray photoelectron spectroscopy

The effects of high magnetic field annealing on the inter-diffusion behavior of Co/Si (100) films were investigated using diffusion couple technique. Significant Co and Si inter-diffusion was verified by X-ray photoelectron spectroscopy. The inter-diffusion coefficients of thin-film/semiconductor were calculated. Compared to the no-field case, the inter-diffusion coefficients clearly increased when a high magnetic field of 11.5 T was applied at 300 degrees C, 350 degrees C, 450 degrees C and 500 degrees C. This effect can be attributed to an increase in the chemical potential gradient induced by magnetic free energy in a high magnetic field. For the samples at 400 degrees C, the inter-diffusion coefficients decreased when a high magnetic field of 11.5 T was applied. The phenomenon may due to the structure transformation caused by a high magnetic field.

• 出版日期2015-6
• 单位东北大学