Microstructure and electrical properties of cosubstituted BiFeO3 thin films prepared by a chemical solution deposition

作者：Kim J K; Kim S S^*; Park M H; Choi E J; Kim J W; Guo R; Bhalla A S

来源：Ferroelectrics, 2006, 345: 77-82.

DOI：10.1080/00150190601021238

• BiFeO3
• chemical solution deposition
• ferroelectric hysteresis loop
• leakage current density

5 mol % La3+, Nd3+ or Y3+ -cosubstituted BiFe0.97Cr0.03O3 thin films (denoted by BLaFCr, BNdFCr, and BYFCr, respectively) have been successfully deposited on Pt (200)/TiO2/SiO2/Si substrates by a chemical solution deposition method. Well-saturated ferroelectric hysteresis loops and low leakage current densities have been observed in BLaFCr, BNdFCr, and BYFCr thin films with single-phase structure. The values of remanent polarization (P-r) and coercive field (E-c) were 64 mu C/cm(2) and 275 kV/cm, 61 mu C/cm(2) and 290 kV/cm, and 31 mu C/cm(2) and 315 kV/cm for BLaFCr, BNdFCr and BYFCr thin films at the maximum electric field of 712 kV/cm, respectively. In the present study, the differences in values of P-r seem to be related to the doped ionic radii.

• 出版日期2006