Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass

作者：Erlacher A; Ambrico A; Perna G; Schiavulli L; Ligonzo T; Jaeger H; Ulrich B^*

来源：Applied Surface Science, 2005, 248(1-4): 402-405.

DOI：10.1016/j.apsusc.2005.03.041

• pulsed-laser deposition
• X-ray diffraction
• ZnTe thin films
• amorphous semiconductors

Pulsed-laser deposition (PLD) of ZnTe was performed at; lambda(pld) = 1064 nm and; lambda(pld) = 532 nm employing nanosecond pulses of a Nd:YAG laser. Thin ZnTe films (thickness approximate to 2 mu m) were deposited at room temperature on fused silica glass substrates. X-ray diffraction revealed the influence of the ablation wavelengths on the deposited film texture. The film formed lambda(pld) = 532 nm is amorphous, whereas the one ablated at lambda(pld) = 1064 nm was amorphous but contained zincblende and wurtzite crystallites as well. The samples exhibited a broad photocurrent response extending into the visible and infrared part of the spectrum to almost 1 eV. The absorption coefficients, which were measured with standard constant photocurrent method (s-CPM), showed that the bandgap of the films is considerably shifted to lower energies of 1.0 eV as compared to the crystalline source material of 2.26 eV.

• 出版日期2005-7-30