New insights on the doping of ZnO films with elements from group IIIA through electrochemical deposition

作者：Ramirez D^*; Alvarez K; Riveros G; Tejos M; Lobos M G

来源：Journal of Solid State Electrochemistry, 2014, 18(10): 2869-2884.

DOI：10.1007/s10008-014-2558-0

• Chemical species
• Solubility
• Semiconductor
• Doping
• Electrodeposition
• Compact films
• Nanostructures

This study was focused in the electrodeposition of both compact and nanostructured extrinsic n-type doped ZnO films, which was achieved with aluminum, gallium, and indium. These elements were directly added into a Zn(II) rich electrolyte with molecular oxygen acting as an oxide precursor in aqueous perchlorate media. This way, the use of nitrate ions, whose by-products are accumulated in the aqueous electrolyte, and chloride ions, an electrically active element in ZnO, was therefore avoided. Speciation diagrams, conditional solubility diagrams and a potentiodynamic study were used to explain the way in which extrinsic n-type ZnO can be prepared by electrochemical deposition. Relatively compact films with a highly preferred orientation along the c-axis were suitable for impedance measurements, thus allowing the measurement of their doping levels. Al- and Ga-doped lamellar nanostructures were successfully prepared when the nature of the anion was changed from perchlorate to sulfate. Under specific conditions, the structure of these films changed from opened and isolated nanosheets to interconnected ones. Morphological, optical, and crystallographic properties of these films were also analyzed. Results and discussion presented here should provide a better understanding toward the study of alternative materials in fields such as photovoltaics and photocatalysis.

• 出版日期2014-10