Hidden surface states at non-polar GaN (10(1)over-bar0) facets: Intrinsic pinning of nanowires

作者：Lymperakis L; Weidlich P H; Eisele H; Schnedler M; Nys J P; Grandidier B; Stievenard D; Dunin Borkowski R E; Neugebauer J; Ebert Ph^*

来源：Applied Physics Letters, 2013, 103(15): 152101.

DOI：10.1063/1.4823723

We investigate the electronic structure of the GaN(10 (1) over bar0) prototype surface for GaN nanowire sidewalls. We find a paradoxical situation that a surface state at all k points in the bandgap cannot be probed by conventional scanning tunneling microscopy, due to a dispersion characterized by a steep minimum with low density of states (DOS) and an extremely flat maximum with high DOS. Based on an analysis of the decay behavior into the vacuum, we identify experimentally the surface state minimum 0.6 +/- 0.2 eV below the bulk conduction band in the gap. Hence, GaN nanowires with clean (10 (1) over bar0) sidewall facets are intrinsically pinned.

• 出版日期2013-10-7