A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor

作者：Nguyen Duy P^*; Anh Vu Pham; Aryanfar Farshid

来源：IEEE Microwave and Wireless Components Letters, 2016, 26(9): 696-698.

DOI：10.1109/LMWC.2016.2597235

• Gallium Arsenide
• K-band
• MMIC
• stacked-FET
• T/R switch

A K-band monolithic microwave integrated circuit (MMIC) transmit and receive (T/R) single pole double throw (SPDT) switch with low insertion loss, high isolation and ultra-high output power is demonstrated using 0.15-mu m Gallium Arsenide (GaAs) technology. A shunt field effect transistor (FET) configuration is used to provide low insertion loss and high isolation while the stacked-FET is employed to improve power handling capability. The novel GaAs switch exhibits a minimum measured insertion loss of 1.4 dB and less than 2.5 dB from 22 GHz to 26 GHz as well as 44 dB isolation. The measured input 1-dB power compression point (P-1 (dB)) exceeds 4 W.

• 出版日期2016-9