Transient electron population and optical properties in a semiconductor quantum well

作者：Wang Zhiping^*; Yu Benli; Wu Xuqiang; Zhen Shenglai; Cao Zhigang; Zhu Jun

来源：Superlattices and Microstructures, 2011, 50(6): 734-742.

DOI：10.1016/j.spmi.2011.10.001

• Semiconductor quantum well
• Electron population
• Optical transient properties

We investigate the transient behaviors of the dispersion and the absorption in a three-level GaAs/AlGaAs semiconductor quantum well system. It is found that the Fano interference and the energy splitting affect the transient behaviors dramatically, which can be used to manipulate efficiently the gain-absorption coefficient and group velocity of the probe field. The dependence of transient electron population on the Fano interference and the energy splitting is also discussed.

• 出版日期2011-12
• 单位安徽大学