Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

作者：Wang Luyang; Lian Jie; Cui Peng; Xu Yang; Seo Sohyeon; Lee Junghyun; Chan Yinthai; Lee Hyoyoung^*

来源：Chemical communications, 2012, 48(34): 4052-4054.

DOI：10.1039/c2cc17543f

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

• 出版日期2012