A highly conducting graphene film with dual-side molecular n-doping

作者：Kim Youngsoo; Park Jaesung; Kang Junmo; Yoo Je Min; Choi Kyoungjun; Kim Eun Sun; Choi Jae Boong; Hwang Chanyong; Novoselov K S; Hong Byung Hee^*

来源：Nanoscale, 2014, 6(16): 9545-9549.

DOI：10.1039/c4nr00479e

Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 x 10(13) cm(-2), and the sheet resistance is as low as, similar to 86 +/- 39 Omega sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.

• 出版日期2014-8-21