科研之友
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摘要
A novel model is presented to explain the low-temperature growth mechanism of silicon nanotube (SiNT) in catalytic chemical vapor deposition. The developed model is based on kinetic theory of gases and phonon vibrations of SiNT on catalyst and is in agreement with reported experimental works. Simulations demonstrate that the SiNT can grow more than 51 mu m and growth is saturated at a certain time. Also investigations show the existence of an optimum temperature and an optimum catalyst for growth process. Finally, effect of the partial pressure of decomposed feedstock gas on the SiNT growth is presented.
- 出版日期2016-10
