Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine

作者：Chen Y W^*; Lai C M; Cheng L W; Hsu C H; Liang C W

来源：Journal of Electronic Materials, 2012, 41(7): 1936-1940.

DOI：10.1007/s11664-012-1957-1

• HfO2
• aluminum
• fluorine
• effective work function

This work demonstrates the valence band-edge effective work phi (m) ,(eff)) of a titanium nitride (TiN) gate with a hafnium oxide (HfO2) dielectric using a cost-effective, low-complexity gate-first integration scheme. Aluminum (Al) ion implantation following TiN gate stack formation yielded a phi (m) ,(eff) of 5.0 eV without an equivalent oxide thickness penalty. Additionally, the incorporation of fluorine (F) into the HfO2 dielectric by the channel implantation approach further improved phi (m) ,(eff) to 5.1 eV. This technique for modulating phi (m) ,(eff) has potential for threshold-voltage tuning without any process complexity in high-k/metal gate low-power applications.

• 出版日期2012-7
• 单位清华大学