Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology

作者：Long Hong Yao^*; Luther King Ngwendson; Sweet Mark R; Narayanan Ekkanath Madathil Sankara

来源：IEEE Transactions on Power Electronics, 2012, 27(5): 2673-2679.

DOI：10.1109/TPEL.2011.2175949

• Clustered insulated gate bipolar transistor (CIGBT)
• insulated gate bipolar transistor (IGBT)
• short circuit

In this paper, the short-circuit performance of a conventional 3.3-kV clustered insulated gate bipolar transistor (CIGBT) in field-stop (FS) technology is evaluated through extensive 2-D numerical simulations. For comparison, an equivalent 3.3-kV FS IGBT is considered. The conventional CIGBT shows superior performance of lower on-state voltage drop and saturation current densities in comparison to an equivalent IGBT. Further improvements to the CIGBT performance can be obtained without sacrificing on-state voltage drop by using a PMOS trench gate. The charge balance and electric field distribution with the varying n-buffer thickness at short-circuit condition are analyzed in detail.

• 出版日期2012-5