摘要

Nanostructured silicon solar cells show great potential for new-generation photovoltaics due to their ability to approach ideal light-trapping. However, the nanofeatured morphology that brings about the optical benefits also introduces new recombination channels, and severe deterioration in the electrical performance even outweighs the gain in optics in most attempts. This Research News article aims to review the recent progress in the suppression of carrier recombination in silicon nanostructures, with the emphasis on the optimization of surface morphology and controllable nanostructure height and emitter doping concentration, as well as application of dielectric passivation coatings, providing design rules to realize high-efficiency nanostructured silicon solar cells on a large scale.