A Low Miller Capacitance VDMOS with Shield Gate and Oxide Trench

作者：Ren, Min^*; Chen, Zhe; Niu, Bo; Cao, Xiaofeng; Li, Shuang; Li, Zehong; Zhang, Bo

来源：7th IEEE International Nanoelectronics Conference, Chengdu, PEOPLES R CHINA, 2016-05-09 To 2016-05-11.

• VDMOS
• Miller capacitance
• Specific on-resistance
• Breakdown voltage

A novel structure was proposed to improve the Miller capacitance C-gd of VDMOS. The gate of conventional VDMOS is split into the control gate and the shield gate in the new structure. Moreover, a trench filled with oxide is introduced in the surface of semiconductor under the shield gate. According to the simulation, the new structure reduced C-gd by 31% compared with the conventional one, almost without degradation of the specific on-resistance (R-sp,R-on) and breakdown voltage (BV).

• 出版日期2016
• 单位电子薄膜与集成器件国家重点实验室; 电子科技大学