摘要
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimenal research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices are assembled less than per square centimeter. The experimental results show that large-scale assembly is realized, and the success rate of ideal assembly for SWCNTs FET is achieved.
- 出版日期2016
- 单位沈阳建筑大学