Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrOx Dielectric After DPN Process Accompanying Nitrogen Concentrations

作者：Lee Win Der^*; Wang Mu Chun; Wang Shea Jue; Lan Wen How; Li Chao Wang; Yang Bor Wen

来源：IEEE Transactions on Plasma Science, 2014, 42(12): 3747-3750.

DOI：10.1109/TPS.2014.2357024

• Decoupled plasma nitridation (DPN)
• Early effect
• high-k (HK) dielectric
• model
• MOSFET

The model of the Early effect at nanonode devices should be modified owing to the unignored contribution of vertical gate field. This effect is more obvious when the channel length is decreased more. Using higher decoupled plasma nitridation nitrogen treatment after high-k dielectric deposition, besides enhancing the drive current due to promoting the microscopic homogeneity of the Hf-based film, seems also to little suppress the Early effect. This phenomenon at L = 0.03 mu m device is proved and due to the lower beta-slope of influencing the high-vertical field.

• 出版日期2014-12