MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

作者：Sala, Elisa M.^*; Arikan, Ismail F.; Bonato, Leo; Bertram, Frank; Veit, Peter; Christen, Juergen; Strittmatter, Andre; Bimberg, Dieter

来源：Physica Status Solidi (B) Basic Research, 2018, 255(12): 1800182.

DOI：10.1002/pssb.201800182

• AlP barrier
• GaP
• InGaSb
• MOVPE growth
• nanoscale memory
• quantum dots

The structural and optical properties of InGaSb/GaP(001) type-II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb-flush prior to QD growth are used to tune the structural and optical properties of InGaSb QDs. The Sb-flush affects the surface diffusion leading to more homogeneous QDs and to a reduction of defects. A ripening process during GRI occurs, where QD size is increased and QD-luminescence remarkably improved. InGaSb QDs are embedded in GaP n + p-diodes, employing an additional AlP barrier, and characterized electrically. A localization energy of 1.15 eV for holes in QDs is measured by using deep-level transient spectroscopy (DLTS). The use of Sb in QD growth is found to decrease the associated QD capture cross-section by one order of magnitude with respect to the one of In0.5Ga0.5As/GaP QDs. This leads to a hole storage time of almost 1 h at room temperature, which represents to date the record value for MOVPE-grown QDs, making MOVPE of InGaSb/GaP related QDs a promising technology for QD-based nano-memories.

• 出版日期2018-12
• 单位中国科学院长春光学精密机械与物理研究所