Design of Psub-SMPD and DNW-SMPD fabricated in a standard 0.18-mu m CMOS process

作者：Wang, Rong^*; Fan, Chen; Wang, Zhi-Gong

来源：IEICE Electronics Express, 2017, 14(14): 20170611.

DOI：10.1587/elex.14.20170611

• spatially-modulated photo detector
• responsivity
• parasitic capacitance
• trans-impedance amplifier
• limiting amplifier
• very-short-reach

A PSUB-strip-spatially-modulated photo detector (SMPD) and a DNW-strip-SMPD were fabricated in a standard 0.18-mu m CMOS process. We analyzed and compared the bandwidth, the responsivity, and the parasitic capacitance of two PDs to provide the basis of choice for 3-5 Gbps optical receiver system. The measured responsivity and work frequency of the Psub-SMPD is 2.2A/W and 1.8 GHz, while DNW-SMPD is 1.4A/W and 2.9 GHz at the wavelength of 850 nm. Combined with a high performance trans-impedance amplifier and a limiting amplifier designed by us, the Psub-strip-SMPD can be used to obtain high sensitivity for the application of 3-Gbps VSR system, while for achieving the application of 5-Gbps, the DNW-strip-SMPD can be employed. Compared with other PDs recently reported, Psub-strip-SMPD and DNW-strip-SMPD exhibit the higher FOM.

• 出版日期2017-7-25
• 单位东南大学