Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

作者：Pandey Raghvendra K^*; Stapleton William A; Sutanto Ivan

来源：IEEE Journal of the Electron Devices Society, 2015, 3(3): 276-283.

DOI：10.1109/JEDS.2015.2409023

• Varistors
• transistors
• signal amplification
• transconductance

An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a biasing voltage (V-b). This leads to the formation of a hybrid device consisting of a biased varistor and transistor. The studies were done under two experimental conditions; first, when the ratio between the drain current (Id) and the bias current (I-b) is of the order of 103 or more, and second when it is less than 10(2). The transistors embedded in the hybrid device exhibit the typical attributes of a conventional transistor. The transistors are analogous to the well-established bipolar junction transistors and yet different because they are based on different physical principles. These transistors can meet the requirements of many general purpose applications and can also function satisfactorily as low-pass filters. The specialized applications could be under hazardous conditions such as at high temperatures, in radiation-filled environments such as outer space, and possibly in bio systems. The biased varistor assumes the property of mutual conductance like a transistor as well as becomes a good signal amplifier.

• 出版日期2015-5