High-Current-Density Monolayer CdSe/ZnS Quantum Dot Light-Emitting Devices with Oxide Electrodes

作者:Likovich Edward M*; Jaramillo Rafael; Russell Kasey J; Ramanathan Shriram; Narayanamurti Venkatesh
来源:Advanced Materials, 2011, 23(39): 4521-+.
DOI:10.1002/adma.201101782

摘要

Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.

  • 出版日期2011-10-18