Fast and accurate estimation of SRAM read and hold failure probability using critical point sampling

作者：Chang I J; Park J^*; Kang K; Roy K

来源：IET Circuits, Devices and Systems, 2010, 4(6): 469-478.

DOI：10.1049/iet-cds.2010.0137

Owing to increase in parametric variations with technology scaling, accurate estimation of bit-cell failure probability in nano-scale static random access memory (SRAM) has become an extremely challenging task. In this study, the authors propose a method to detect the SRAM bit-cell failure, named 'critical point sampling'. Using this technique, read and hold failure probability of an SRAM bit-cell can be efficiently estimated in a simulation-based way. Simulation results show that our estimation method provides high accuracy, while being similar to 50x faster in computational speed compared to transient Monte-Carlo simulation. The method can be applied to optimise SRAM design for better yield and contributes significantly in reducing the overall design time.

• 出版日期2010-11