High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

作者：Passi Vikram^*; Ravaux Florent; Dubois Emmanuel; Clavaguera Simon; Carella Alexandre; Celle Caroline; Simonato Jean Pierre; Silvestri Luca; Reggiani Susanna; Vuillaume Dominique; Raskin Jean Pierre

来源：IEEE Electron Device Letters, 2011, 32(7): 976-978.

DOI：10.1109/LED.2011.2146750

• Gas detection
• metal-oxide-semiconductor field-effect transistors (MOSFETs)
• silicon nanowires (NWs)
• silicon surface functionalization

The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynyl-benzyl)- 1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 x 10(6) is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simulant. This represents a four-decade improvement over previous demonstration based on nanoribbons, proving better sensing capabilities of NWs. Technology-computer-aided-design simulations before and after gas detection have been performed to gain insight into the physical mechanisms involved in the gas detection and to investigate the impact of the surface-to-volume ratio on sensor sensitivity.

• 出版日期2011-7