Stability of Doped C50 and C70 Based on Curvature and Electronic Structures

作者:Bao Jin-Xiao; Wang Xiao-Xia; Wu Tong-Wei; Jia Gui-Xiao*; Zhang Yong-Fan
来源:Acta Physico - Chimica Sinica, 2015, 31(5): 899-904.
DOI:10.3866/PKU.WHXB201503201

摘要

The doping energies and electronic structures of B, N, Si, P, and Co in C-50 and C-70 were investigated using the density functional theory (DFT)-B3LYP/6-31G* method, and the structural stabilities of doped fullerenes were investigated based on curvature theory and the electronic structures. The calculated results showed that the doping energies decreased with increasing curvature, and increased with increasing atomic radius of the doping species. Doping with B, N, P, and Co stabilized the C-50 structure. However, doping with B and N was disadvantageous for the structural stability of Cm. The doping reactivities were mainly determined by the curvature and related to the percentage of nonequivalent carbon atoms in the highest occupied molecular orbital (HOMO), and a large percentage was beneficial for the doping stability. In addition, whether the doped atoms accepted or lost electrons depended on their electronegativity. This work will be helpful for the stabilization of fullerene structures in experiment.

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