Size-dependent effect of energy transfer on photoluminescence from Si nanocrystals in close proximity with ZnO films

作者：Kim Sung; Shin Dong Hee; Kim Chang Oh; Hong Seung Hui; Choi Suk Ho^*

来源：Thin Solid Films, 2012, 520(7): 3000-3002.

DOI：10.1016/j.tsf.2011.12.026

• Silicon
• Nanocrystals
• Zinc Oxide
• Photoluminescence

300 nm SiOx layers grown on p-type (100) Si wafer have been annealed to form Si nanocrystals (NCs) within SiO2. 100 nm ZnO films have been then deposited on top of the SiO2:Si NC layers and annealed to form hybrid structures of ZnO/Si NCs. The PLSi (photoluminescence from Si NCs) intensity of the hybrid structures increases almost linearly with decreasing size of Si NCs (d(Si)) from 3.8 to 2.0 nm, whilst the PLZno (PL from ZnO) gradually increases down to d(Si) = similar to 2.5 nm and then sharply decreases. In the SiO2:Si NC layers without ZnO, the PLSi intensity sharply increases to a maximum at d(Si) = similar to 2.5 nm, and by further decrease of d(Si), it decreases. These results suggest that the energy transfer from Si NCs to ZnO occurred in the range of d(Si) = 3.8 to similar to 2.5 nm and vice versa below d(Si) = similar to 2.5 nm.

• 出版日期2012-1-31